Maturing ion-implantation technology and its device applications in SiC

This paper reviews the results of a comprehensive donor, acceptor, and compensation ion-implantation work in α-SiC by the author’s group in the past 10 years. Ion-implantation of N, P, As, and Sb donors; B, Al, and Ga acceptors; and V, Si, and C compensators are performed into SiC epitaxial layers and bulk semi-insulating substrates. Empirical range statistics formulas that are valid in the keV–MeV energy range are developed for donor and acceptor ion-implantations. Implanted material is annealed at different temperatures up to 1700 °C with different protective cap conditions. Results of atomic force microscopy, Rutherford back-scattering, secondary ion mass spectrometry depth profile, van der Pauw Hall, and capacitance–voltage measurements intended to evaluate the surface morphology, lattice perfection, implant thermal stability, and implant electrical activation in the as-implanted and annealed material are presented and discussed. Results on demonstrative devices made by ion-implantation in SiC are also presented.