Liquid Phase Epitaxy of InP

Liquid phase epitaxy by conventional tipping technique has been employed for the growth of high purity epitaxial layers. The layers were grown at 720°‐560°C on (100) and (111) oriented InP substrates. Characteristic surface structures for the substrate orientations as a function of the growth temperature were observed. The layers were characterized by Hall data and photoluminescence measurements at low temperatures. The simultaneous observation of the band‐acceptor and donor‐acceptor pair transition due to the main acceptor in our LPE‐layers is reported. The binding energy of this acceptor is determined to .