X-ray photoelectron spectroscopy characterization of radio frequency reactively sputtered carbon nitride thin films
作者
Sunil Kumar,Kenneth Butcher,T.L. Tansley
出处
期刊:Journal of vacuum science & technology [American Institute of Physics] 日期:1996-09-01卷期号:14 (5): 2687-2692被引量:60
标识
DOI:10.1116/1.580188
摘要
Carbon nitride thin films prepared by radio frequency reactive sputtering of graphite in pure nitrogen plasma have been characterized by x-ray photoelectron spectroscopy (XPS) for probing the chemical bonding in the films. The multiple binding energy values obtained for the C 1s and N 1s photoelectrons in the film suggest that both the C and N atoms exhibit at least three types of chemical states, manifestative of different types of the C–N bonding present in the material. The presence of theoretically predicted β-C3N4 phase in our C–N films has been suggested on the basis of XPS and optical data.