堆积
材料科学
成核
范德瓦尔斯力
结晶学
图层(电子)
格子(音乐)
凝聚态物理
化学物理
纳米技术
热力学
分子
化学
物理
声学
有机化学
作者
Hoseok Heo,Ji Ho Sung,Ji‐Hoon Ahn,Fereshte Ghahari,Takashi Taniguchi,Kenji Watanabe,Philip Kim,Moon‐Ho Jo
标识
DOI:10.1002/aelm.201600375
摘要
Different growth mechanisms of van der Waals heteroepitaxial 2D Bi2Te3/Sb2Te3 stacking by choosing different substrates are reported. Sequential Bi2Te3/Sb2Te3 stacking growth mode becomes layer-by-layer growth on h-BN substrates, and 3D island growth on SiO2/Si. Compressive strain in the h-BN substrates imposed by the lattice mismatch plays a crucial role to determine different growth modes in these 2D nucleation kinetics models.
科研通智能强力驱动
Strongly Powered by AbleSci AI