Tuning the Electronic, Optical, and Transport Properties of Phosphorene
电子能带结构
光电子学
半导体
电子结构
作者
L. L. Li,F. M. Peeters
出处
期刊:NATO science for peace and security series日期:2020-01-01卷期号:: 3-42被引量:1
标识
DOI:10.1007/978-94-024-2030-2_1
摘要
Phosphorene is one of the most important 2D materials, which was exfoliated from bulk black phosphorus in 2014. This 2D material features the combined properties of large band gap, high carrier mobility, and strong in-plane anisotropy, which make it well suited for future electronic and optoelectronic applications. The electronic, optical and transport properties of phosphorene tuned by gating, strain, and disorder effects are presented in this chapter. To this end, tight-binding approach, linear Kubo formula, and scattering matrix method are employed.