石墨烯
晶体管
材料科学
光电子学
无线电频率
电气工程
工程物理
纳米技术
电子工程
电压
工程类
作者
Han Wang,Thiti Taychatanapat,Allen Hsu,Kenji Watanabe,Takashi Taniguchi,Pablo Jarillo‐Herrero,Tomás Palacios
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:2011-09-01
卷期号:32 (9): 1209-1211
被引量:176
标识
DOI:10.1109/led.2011.2160611
摘要
In this letter, we demonstrate the first BN/graphene/BN field-effect transistor for RF applications. This device structure can preserve the high mobility and the high carrier velocity of graphene, even when it is sandwiched between a substrate and a gate dielectric, and is hence very promising to enable the next generation of high-frequency graphene RF electronics.
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