钙钛矿(结构)
能量转换效率
掺杂剂
氧化锡
卤化物
材料科学
金属
分析化学(期刊)
图层(电子)
兴奋剂
镓
钙钛矿太阳能电池
氧化物
化学
无机化学
结晶学
纳米技术
光电子学
冶金
色谱法
作者
K. Deepthi Jayan,Varkey Sebastian
标识
DOI:10.1088/1361-6641/abf46c
摘要
Abstract In this study, SCAPS-1D software is used to model and analyze the performance of various perovskite solar cells (PSCs) with diverse back contact metals, electron transport layers and hole transport layers combined with different mixed halide perovskite absorber materials CH 3 NH 3 PbI 3− X Cl X and CH 3 NH 3 PbI 3− X Br X for X = 1, 2. With CH 3 NH 3 PbI 3− X Cl X as the absorber layer, the best performance is obtained for the configuration glass/fluorine-doped tin oxide (FTO)/indium gallium zinc oxide (IGZO)/CH 3 NH 3 PbI 3− X Cl X /CuSbS 2 /Au for X = 1 with a fill factor (FF) of 61.83% and a power conversion efficiency of 13.31%. The device configuration glass/FTO/IGZO/CH 3 NH 3 PbI 3− X Br X /CuO/Pd for X = 1 shows the best performance with a power conversion efficiency of 15.55% and FF of 71.19% for CH 3 NH 3 PbI 3− X Cl X as the absorber layer. The study shows that the optimum total defect density values of the absorber layer, MAPbI 3− X Cl X with X = 1 and X = 2 are 2.5 × 10 13 cm −3 and 2.5 × 10 14 cm −3 , respectively. For the MAPbI 3− X Br X absorber layer, with X = 1 and 2, the optimum defect density is found to be 1 × 10 15 cm −3 . The optimum dopant concentration is found to be 1.0 × 10 18 cm −3 and 1.0 × 10 16 cm −3 , respectively, for PSCs with MAPbI 3− X Cl X as the absorber layer, for X = 1 and 2. For PSCs with MAPbI 3– X Br X as an absorber layer with X = 1 and 2, the optimum dopant density is found to be 1.0 × 10 16 cm −3 each. The device is found to be stable at an operating temperature of 300 K.
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