钝化
材料科学
光刻胶
量子点
光致发光
量子产额
光电子学
锌
纳米技术
表面改性
配体(生物化学)
抵抗
产量(工程)
光刻
化学工程
曲面(拓扑)
量子效率
发光二极管
表面工程
图层(电子)
光漂白
作者
Liuqing Han,Haixin Zhang,Qizhong Lin,Yangyang Xie,Yonghui Zhang,Chong Geng,Yang Li,Shu Xu
标识
DOI:10.1021/acsami.6c18064
摘要
The practical application of quantum dot photoresists (QDPRs) for high-resolution displays is critically hindered by the insufficient passivation of surface anionic sites. Here, we report a surface modification strategy that integrates synergistic Z-type ligand zinc bis[2-(methacryloyloxy)ethyl] phosphate (Zn-BMEP) and zinc mono-2-(methacryloyloxy)ethyl succinate (Zn-MMES) to overcome these intrinsic limitations. The Z-type ligands selectively bind to anionic sites via phosphine-mediated surface reaction, forming a Zn-rich surface with hybrid MMES-BMEP groups that endow the QDs with both robust surface passivation and high solubility in photoresists and their solvents. The cured QDPRs achieve a high photoluminescence quantum yield of up to 87% and demonstrate remarkable photostability, with the red and green QDPR layers retaining over 90 and 83% of their initial emission intensity after 500 h of accelerated aging at 85 °C, even without air-barrier encapsulation. Photolithographic patterning of the QDPR yields high-resolution color conversion layers with 2 μm pixel size, excellent uniformity, and superior color performance. This surface engineering strategy resolves the trade-off between surface stability and photoresist compatibility, paving the way for stable, high-performance QDPRs in next-generation displays.
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