Patterning of Photoresist‐Compatible Perovskite Quantum Dots for High‐Definition Displays

ABSTRACT The patterning of perovskite quantum dots (PQDs) represents a critical step toward high‐resolution displays. Although blending PQDs with photoresists enables lithographic integration, their intrinsic ionic character and poor stability lead to severe erosion and fluorescence quenching when exposed to polar components. To overcome these challenges, a stabilized PQD‐photoresist nanocomposite has been developed through multi‐step encapsulation. First, in situ growth of PQDs on amino silane‐functionalized silica nanoparticles suppresses aggregation. Potassium ions are then incorporated to passivate the surface defects. Finally, a fluorinated silane forms a protective barrier against polar species. The resulting nanocomposite achieves up to 96% photoluminescence quantum yield and exceptional thermal stability, maintaining 99% initial emission after 80 days at 85°C. It can be uniformly dispersed in negative‐tone photoresist and patterned via UV lithography, producing well‐defined microstructures with minimum linewidths of 1.5 µm (11200 pixels per inch, PPI). Dual‐color patterning with 15 µm linewidths for green and red PQDs achieves 560 PPI. A white‐light prototype integrating these color‐conversion layers with a blue Mini‐LED and liquid crystal panel demonstrates a color gamut covering 132% of the NTSC standard. This work provides a robust, scalable platform for integrating high‐performance PQDs into micro‐optoelectronics.