A thermally engineered NbO x memristor with CdTe 2 interlayers for high-accuracy ECG arrhythmia detection

the Poole-Frenkel (PF) emission model. Our investigation reveals that a double interlayer structure yields the highest effective thermal resistance, thereby most effectively reducing the threshold voltage. By implementing this structure, we enhanced the switching stability by 30.9%. Furthermore, increasing the thickness of the double-sided interlayers from 3 nm to 9 nm improved the stability by an additional 24.7% while simultaneously lowering the threshold voltage. The impact of the interlayer thickness on oscillatory behavior was systematically analyzed within a leaky integrate-and-fire (LIF) neuron circuit, where the observed frequency saturation phenomenon provides critical guidance for thermal engineering design. Capitalizing on these findings, we developed a multimodal, integrated memristor-based system for electrocardiogram (ECG) arrhythmia detection that leverages device thickness and temperature characteristics to achieve a classification accuracy rate of 90.0%. This work underscores the significant value of such physically interpretable devices for the hardware realization of neuromorphic computing.