电迁移
纳米线
材料科学
大规模运输
电流密度
铜
透射电子显微镜
电极
稳健性(进化)
电场
电流(流体)
纳米技术
化学物理
光电子学
工程物理
复合材料
化学
冶金
物理
热力学
物理化学
量子力学
基因
生物化学
作者
Yu-Ting Huang,Chun‐Wei Huang,Jui-Yuan Chen,Yi-Hsin Ting,S.L. Cheng,Chien‐Neng Liao,Wen‐Wei Wu
出处
期刊:Nano Research
[Springer Science+Business Media]
日期:2016-02-24
卷期号:9 (4): 1071-1078
被引量:17
标识
DOI:10.1007/s12274-016-0998-9
摘要
Electromigration in Cu has been extensively investigated as the root cause of typical breakdown failure in Cu interconnects. In this study, Cu nanowires connected to Au electrodes are fabricated and observed using in situ transmission electron microscopy to investigate the electro- and thermo-migration processes that are induced by direct current sweeps. We observe the dynamic evolution of different mass transport mechanisms. A current density on the order of 106 A/cm2 and a temperature of approximately 400 °C are sufficient to induce electro- and thermo-migration, respectively. Observations of the migration processes activated by increasing temperatures indicate that the migration direction of Cu atoms is dependent on the net force from the electric field and electron wind. This work is expected to support future design efforts to improve the robustness of Cu interconnects.
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