材料科学
光电子学
肖特基势垒
氧化铟锡
肖特基二极管
介电谱
氧化物
能量转换效率
铟
纳米线
太阳能电池
兴奋剂
图层(电子)
纳米技术
电化学
电极
冶金
二极管
化学
物理化学
作者
Hong-Sik Kim,Malkeshkumar Patel,Hyeong‐Ho Park,Abhijit Ray,Chaehwan Jeong,Sangho Kim
标识
DOI:10.1021/acsami.5b12732
摘要
Thermally stable silver nanowires (AgNWs)-embedding metal oxide was applied for Schottky junction solar cells without an intentional doping process in Si. A large scale (100 mm(2)) Schottky solar cell showed a power conversion efficiency of 6.1% under standard illumination, and 8.3% under diffused illumination conditions which is the highest efficiency for AgNWs-involved Schottky junction Si solar cells. Indium-tin-oxide (ITO)-capped AgNWs showed excellent thermal stability with no deformation at 500 °C. The top ITO layer grew in a cylindrical shape along the AgNWs, forming a teardrop shape. The design of ITO/AgNWs/ITO layers is optically beneficial because the AgNWs generate plasmonic photons, due to the AgNWs. Electrical investigations were performed by Mott-Schottky and impedance spectroscopy to reveal the formation of a single space charge region at the interface between Si and AgNWs-embedding ITO layer. We propose a route to design the thermally stable AgNWs for photoelectric device applications with investigation of the optical and electrical aspects.
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