Effect of nitrogen doping on the dislocation behaviors of 4H-SiC

We demonstrate that nitrogen (N) dopants are prone to spontaneously decorate the most important dislocation of basal plane dislocation (BPD) during the N doping of 4H silicon carbide (4H-SiC). The N decoration shifts the acceptor-like states of BPDs to donor-like states, which results in the donor-like character of BPDs in N-doped 4H-SiC. Kinetically, N decoration enhances the slip and piling up of BPDs, reducing the hardness, elastic modulus and fracture toughness of 4H-SiC.