电阻式触摸屏
太阳能电池
光电子学
电致发光
电压
电动势
材料科学
暗电流
等效串联电阻
电极
光学
物理
纳米技术
电气工程
图层(电子)
光电探测器
工程类
量子力学
作者
M. A. Mintairov,V. V. Evstropov,S. A. Mintairov,M. V. Nakhimovich,R. A. Salii,М. Z. Shvarts,V. G. Dubrovskiı̆,N. A. Kalyuzhnyy
标识
DOI:10.1016/j.solmat.2022.111863
摘要
A new experimental method for obtaining resistive-less dark current-voltage (IV) characteristic of multi-junction solar cells has been developed. The method realizes by measuring dark voltage, dark current, and additional measurements of the electroluminescence (EL) intensity of subcells. It has been shown that in the resistive-less mode (low currents), the dark voltage depends logarithmically on the product of EL intensities of subcells. Experimental definition of this dependence has made it possible to determine the relationship between the intensities and the voltage. The method has been applied to a GaInP/GaAs solar cell, in which three effects have an influence on IV characteristic: the mismatch of photocurrents generated by subcells, the nonlinear series resistance, and counter-electromotive force. It has been experimentally found that the result of the method does not depend on these effects and allows obtaining a fundamental dark resistive-less IV characteristic of multi-junction solar cells.
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