压电
材料科学
压电响应力显微镜
铁电性
压电系数
拉伤
凝聚态物理
失真(音乐)
相变
相(物质)
复合材料
光电子学
化学
电介质
物理
内科学
医学
有机化学
放大器
CMOS芯片
作者
Raktima Basu,G. Mangamma,Sandip Dhara
出处
期刊:ACS omega
[American Chemical Society]
日期:2022-04-27
卷期号:7 (18): 15711-15717
被引量:6
标识
DOI:10.1021/acsomega.2c00645
摘要
[Image: see text] VO(2) is well known for its dual-phase transitions, electrical and structural, at a single temperature of 340 K. The low-temperature structural phases of VO(2) are different from their high-temperature counterpart in terms of structural symmetry. The strain-induced modification of the structural distortion in VO(2) is studied in detail. A ferroelectric-type distortion is observed, and therefore, the piezoelectric effect in the low-temperature phases of VO(2) is investigated, for the first time, by piezoresponse force microscopy. Strain is one of the factors that can modify the electronic behavior of piezoelectric materials. At the same time, the two low-temperature phases of VO(2) (M1 and M2) can only be separated by the application of strain. The piezoelectric coefficient in the strained phase of VO(2) was found to be 11–12 pm/V, making it eligible for piezotronic applications.
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