压电
材料科学
压电响应力显微镜
铁电性
压电系数
拉伤
凝聚态物理
失真(音乐)
相变
相(物质)
复合材料
光电子学
化学
电介质
物理
内科学
医学
有机化学
放大器
CMOS芯片
作者
Raktima Basu,G. Mangamma,Sandip Dhara
出处
期刊:ACS omega
[American Chemical Society]
日期:2022-04-27
卷期号:7 (18): 15711-15717
被引量:8
标识
DOI:10.1021/acsomega.2c00645
摘要
High Resolution Image Download MS PowerPoint Slide VO 2 is well known for its dual-phase transitions, electrical and structural, at a single temperature of 340 K. The low-temperature structural phases of VO 2 are different from their high-temperature counterpart in terms of structural symmetry. The strain-induced modification of the structural distortion in VO 2 is studied in detail. A ferroelectric-type distortion is observed, and therefore, the piezoelectric effect in the low-temperature phases of VO 2 is investigated, for the first time, by piezoresponse force microscopy. Strain is one of the factors that can modify the electronic behavior of piezoelectric materials. At the same time, the two low-temperature phases of VO 2 (M1 and M2) can only be separated by the application of strain. The piezoelectric coefficient in the strained phase of VO 2 was found to be 11–12 pm/V, making it eligible for piezotronic applications.
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