Chemical Patterning of High‐Mobility Semiconducting 2D Bi2O2Se Crystals for Integrated Optoelectronic Devices

Patterning of high-mobility 2D semiconducting materials with unique layered structures and superb electronic properties offers great potential for batch fabrication and integration of next-generation electronic and optoelectronic devices. Here, a facile approach is used to achieve accurate patterning of 2D high-mobility semiconducting Bi₂ O₂ Se crystals using dilute H₂ O₂ and protonic mixture acid as efficient etchants. The 2D Bi₂ O₂ Se crystal after chemical etching maintains a high Hall mobility of over 200 cm² V^-1 s^-1 at room temperature. Centimeter-scale well-ordered arrays of 2D Bi₂ O₂ Se with tailorable configurations are readily obtained. Furthermore, integrated photodetectors based on 2D Bi₂ O₂ Se arrays are fabricated, exhibiting excellent air stability and high photoresponsivity of ≈2000 A W^-1 at 532 nm. These results are one step towards the practical application of ultrathin 2D integrated digital and optoelectronic circuits.