Optical and Electrical Measurements of Low-Temperature InAlAs

Photoluminescence, photocurrent, thermally stimulated current and photoinduced current transient spectroscopy measurements done on molecular beam epitaxy In0.52Al0.48Aslayer, lattice matched to InP are reported.The investigated 1ayers were grown on semi-insulating InP wafers, at temperature range from 215 to 450°C.It was found that the Fermi leve1 was pinned to a dkinant midgap center (most likely similar to EL2 center).Moreover, there were at least 7 other defects but with much smaller concentrations.Their activation energies were equal to 0.076, 0.11, 0.185, 0.295, 0.32 and 0.40 eV.The layers exhibited a very low luminescence and a small photocurrent.