响应度
光电子学
光子学
集成电路
光子集成电路
炸薯条
光电探测器
瞬态(计算机编程)
材料科学
物理
光学
计算机科学
电信
操作系统
作者
Rui He,Yijian Song,Naixin Liu,Renfeng Chen,Jin‐Ming Wu,Yufeng Wang,Qiang Hu,Xiongbin Chen,Junxi Wang,Jinmin Li,Tongbo Wei
出处
期刊:APL photonics
[AIP Publishing]
日期:2024-07-01
卷期号:9 (7)
被引量:5
摘要
The monolithically integrated self-driven photoelectric detector (PD) with the light-emitting diode (LED) epitaxial structure completely relies on the built-in electric field in the multi-quantum wells region to separate the photogenerated carriers. Here, we propose a novel superlattices–electron barrier layer structure to expand the potential field region and enhance the detection capability of the integrated PD. The PD exhibits a record-breaking photo-to-dark current ratio of 5.14 × 107, responsivity of 110.3 A/W, and specific detectivity of 2.2 × 1013 Jones at 0 V bias, respectively. A clear open-eyed diagram of the monolithically integrated chip, including the PD, LED, and waveguide, is realized under a high-speed communication rate of 150 Mbps. The obtained transient response (rise/decay) time of 2.16/2.28 ns also illustrates the outstanding transient response capability of the integrated chip. The on-chip optical communication system is built to achieve the practical video signals transmission application, which is a formidable contender for the core module of future large-scale photonic integrated circuits.
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