Soft Defect Localization and Characterization for Advanced IC Packaging Using Novel EOTPR In-Situ Dynamic Temperature Probing

Abstract The high temperatures and thermal cycling experienced by integrated circuit packages can induce warpage that in turn can lead to cracks developing at material interfaces that compromise the integrity of electrical traces within the device. In this study, the authors demonstrate how Electro-Optical Terahertz Pulsed Reflectometry (EOTPR) with dynamic temperature control can be used to localize and characterize the resistive faults created by such thermally induced cracks. The EOTPR technique provides quick, reliable, and accurate results, and it allows automatic probing that can be used to generate defect maps for further root cause analysis. The approach demonstrated in this paper shows the significant potential of EOTPR in soft failure characterization and in failure and reliability analysis.