A Sn-Based Hybrid Ferroelastic Semiconductor with High-Temperature Dielectric Switching

Organic–inorganic halide hybrids have been extensively developed and used in optoelectronic devices because of their superior performance such as ease of assembly, flexible structural tunability, and excellent optoelectronic properties. Ferroelastic strain might be used to modulate and control photoelectric properties such as photovoltaic voltage, while organic–inorganic hybrid ferroelastic semiconductors remain relatively unexplored. Herein, we successfully design a new Sn-base, lead-free hybrid ferroelastic semiconductor, [TPMA] 2 [SnCl 6 ] (TPMA = benzyl trimethylammonium). It undergoes a high-temperature -3 mF -1-type ferroelastic phase transition at 408 K, and intriguingly, its ferroelastic domains can be simultaneously switched under the stimulation of external heat and stress. The ferroelastic phase transition might be derived from the order–disorder transition of organic cations during heating and cooling. Moreover, [TPMA] 2 [SnCl 6 ] also demonstrates a high-temperature dielectric switching property around 408 K, which has good stability and reproducibility. With those benefits, [TPMA] 2 [SnCl 6 ] shows great potential in applications such as energy storage devices, optoelectronic devices, shape memory, intelligent switches, and so on.