极紫外光刻
浸没式光刻
平版印刷术
计算光刻
下一代光刻
光学
临界尺寸
光刻
数值孔径
材料科学
极端紫外线
多重图案
波长
抵抗
模版印刷
X射线光刻
光电子学
物理
电子束光刻
纳米技术
激光器
图层(电子)
标识
DOI:10.1145/3569052.3578910
摘要
Semiconductor technology has advanced to single-digit nanometer dimensions for the circuit elements. The minimum feature size has reached subwavelength dimension. Many resolution enhancement techniques have been developed to extend the resolution limit of optical lithography systems, namely illumination optimization, phase-shifting masks, and proximity corrections. Needless to say, the actinic wavelength and the numerical aperture of the imaging lens have been reduced in stages, The most recent innovations are Immersion lithography and Extreme UV (EUV) lithography
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