记忆电阻器
平面的
导电体
电场
材料科学
动力学(音乐)
纳米技术
分子动力学
凝聚态物理
化学物理
工程物理
物理
计算机科学
复合材料
计算机图形学(图像)
量子力学
声学
作者
C. Li,Tao Xu,Rui Pan,Su-Xin Bao,Kuibo Yin,Jiaxin Shen,Yatong Zhu,Shisheng Hou,Litao Sun
出处
期刊:ACS Nano
[American Chemical Society]
日期:2024-11-05
卷期号:18 (46): 32196-32204
被引量:2
标识
DOI:10.1021/acsnano.4c11598
摘要
2D materials have emerged as potential building blocks for electrochemical metallization (ECM) memristors with excellent performance. The evolution dynamics of conductive filaments (CFs) directly determine the resistance switching performance of the 2D material-based ECM memristors. However, achieving controllable CFs under the operation conditions remains challenging. Here, in situ transmission electron microscopy was employed to investigate the formation and evolution of CFs in Au/MoS
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