表征(材料科学)
六方氮化硼
材料科学
图层(电子)
六方晶系
氮化硼
纳米技术
氮化物
硼
光电子学
结晶学
化学
石墨烯
有机化学
作者
Tianyu Zhang,Shuang Qiao,Hongxia Xue,Zhongqi Wang,Chengdong Yao,Xiong Wang,Kai Feng,Lain‐Jong Li,Dong‐Keun Ki
出处
期刊:Nano Letters
[American Chemical Society]
日期:2024-11-11
卷期号:24 (46): 14774-14780
被引量:2
标识
DOI:10.1021/acs.nanolett.4c04241
摘要
Precise determination of the layer number (N) of hexagonal boron nitride (hBN) is crucial for its integration with other layered materials in applications such as ferroelectric devices and moiré potential modulation. We present a nondestructive method to accurately identify N, combining optical contrast analysis with second harmonic generation (SHG) measurements. By studying the flakes on 90 nm thick SiO2/Si substrates, we demonstrate that red-filtered optical images provide a clear contrast step in N with an uncertainty of ±1 layer, while SHG measurements further reduce the error by distinguishing even and odd layers. We also introduce a real-time detection technique to identify monolayer and few-layer hBN, improving flake identification efficiency. Given the growing interest in twisted hBN interfaces and their integration in van der Waals heterostructures, this method offers a practical approach for future studies.
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