Förster resonance energy transfer (FRET) delivers energy from a donor to an acceptor through near-field dipole–dipole couplings. Engineering FRET is crucial for the development of high-performance polaritonic light sources, innovative optoelectronic logic computing circuits, and the exploration of exciton dynamics. However, direct manipulation of FRET in organic–inorganic heterostructures remains challenging due to factors such as bulk size, excessive disorders, uncontrollable packing modes of organic counterparts, and ultrafast charge transfers. Here, we modify FRET in heterostructures comprising WS2 (acceptor) and highly crystalline wetting-layer pentacene (WL PEN: donor). This non-conductive WL PEN effectively suppresses interlayer charge transfers. By utilizing an electrostatic gate, the maximum FRET enhancement factor (η) reaches ∼56.2, corresponding to a record exciton diffusion coefficient of ∼223.3 cm2/s. They are ascribed to enhanced excitonic absorption of WS2. Additionally, temperature significantly influences FRET, primarily due to changes in exciton population of pentacene at high momenta. Furthermore, we demonstrate a simple multimode optoelectronic logic gate (OELG) on this heterostructure by modulating FRET. Our findings facilitate the understanding of enhanced light–matter interactions and open a new avenue to design out-performing and multifunctional optoelectronic devices and new optoelectronic computing circuits.