Envisaging quantum capacitance in modified germanene: a first principle investigation

Abstract Two-dimensional (2D) nanomaterials with enhanced quantum capacitance have been in high demand over the past few years due to super capacitors application. A number of 2D nanosheet, including MoS 2 , arsenene, antimonene, and germanene, have also been explored for the same reason. The present investigation aims to explore modified germanene such as monovacant germanene/divacant germanene(MVG/DVG) and their derivatives, such as Ns substituted MVG/DVG and transition metal incorporated MVG. It is observed that 1N-MVG/3N-MVG shows the characteristics of a p-type semiconductor, while 3N-MVG/4N-DVG is considered as semiconductor. A robust binding of under-coordinated Ge to transition metals (TMs) at MVG surfaces suggests such functionalization can be accomplished. Except Ti and Co other studied TMs-MVG show metallic nature. Furthermore, it is revealed that there is an asymmetric C Q dispersion in 1N-MVG, 2N-MVG, 3N-MVG, and 4N-DVG, as opposed to the pristine germanene/MVG/DVG. Additionally, it is predicted that TMs such as Ti, V, Cr, Mn, Fe and Co incorporated MVG can provide high quantum capacitance (C Q ). Enormous amount of C Q is noticed for 3N-MVG with maximum of 726 μF cm −2 in the positive biased region. Among TM-MVG, V-MVG and Mn-MVG are well suited to serve as anodes for asymmetric super capacitors due to their C Q peak of 978 μF cm −2 and 1180 μF cm −2 , respectively, in negative bias region.