Enhanced Backgate Tunability on Interfacial Carrier Concentration in Ionic Liquid‐Gated MoS2 Devices

Abstract The periodic spatial modulation potential arising from the zig‐zag distribution of ions at large gate voltage in an ionic liquid‐gated device may enable functionalities in a similar way as nanopatterning and moiré engineering. However, the inherent coupling between periodic modulation potential and carrier concentration in ionic liquid devices has hindered further exploration. Here, the feasibility of decoupling manipulation on periodic modulation potential and carrier density in an ionic liquid device is demonstrated by using a conventional backgate. The backgate is found to have a tunability on carrier concentration comparable to that of ionic gating, especially at large ionic liquid gate voltage, by activating the bulk channels mediated back tunneling between the trapped bands and interfacial channel.