Experimental study of Single Event Upsets on deep submicron and nano devices in space

The Single Event Upsets on deep submicron and nano devices are analyzed. The Single Event Upsets on 0.18μm Static Random Access Memory in space orbits are measured. The measurement results show that the Single Event Upset (SEU) rates of 0.18μm Static Random Access Memory (SRAM) in Low earth orbit (LEO) are about one order of magnitude higher than geosynchronous orbit (GEO). The proton and heavy ion SEU test is performed on 0.18μm SRAM and 65nm SRAM. The SEU rates are calculated. It is found that the SEU rate of 65nm SRAM is much higher than the 0.18μm SRAM. The SEU rates of 0.18μm SRAM are dominant by proton nuclear reaction. The SEU rate of 65nm SRAM is dominant by energetic ion direct ionization. The fact that the SEU rate of 65nm SRAM is higher than the 0.18μm SRAM is attributed to the high flux of particles with small atomic number in space environment.