The VO2 thin film of highly optical switching rate for laser protection in infrared detector

Reactive ion beam sputtering and post-annealing process employed, VO2 thin film was prepared on the sapphire as the substrate, whose dynamic variation of the resistance can reach up to nearly 4 orders of magnitude. Infrared laser of the wavelength of 3.6μm was used to carry out the experiment of laser protection. The result indicates the VO2 thin film achieves the highly infrared switching rate, about 93.4%, demonstrating that the fabricated VO2 thin film has a great effect on laser protection.