Photoluminescent Properties of $\textrm{Zn}_{2}\textrm{SiO}_{4}$: Mn Green Phosphors doped with Ga

We investigated the photoluminescence and the crystalline properties with Ga doping concentrations (0-12 mol%) in green phosphors prepared by the solid state reaction. The photoluminescence was improved by a doping of Ga element in phosphors which showed the highest emission intensity and good color purity in the doping concentration of x=0.08. The emission intensity of (x= 0.08) phosphors was increased to 7 times with increasing the sintering temperatures from to , showing the improved crystalline quality. The decay time was not affected by Ga doping concentrations with constant values around 24ms. It was found from SEM and PSA analyses that the phosphors were composed of a large number of small grains around 1-3 with a small amounts of agglomerated particles above .