光电探测器
材料科学
光电子学
光电流
石墨烯
纳米线
光强度
光学
纳米技术
物理
作者
Jaehyeok Shin,Hohyun Yang,Siyun Noh,Sangmoon Han,Jin-Soo Kim
出处
期刊:Nanoscale
[Royal Society of Chemistry]
日期:2022-01-01
卷期号:14 (30): 10793-10800
摘要
We report the first demonstration of flexible photodetectors, operating at the wavelength window of 1.3 μm, fabricated with InN nanowires (NWs) and graphene on an overhead projector transparency (OHP) sheet. The InN NWs, used as an absorption medium for the device, were formed on a Si substrate and exhibited strong emission with a peak wavelength of 1.3 μm at room temperature. They were randomly and horizontally embedded in the graphene sandwich structure functioned as a carrier channel. The photocurrent and photoresponsivity of the flexible photodetector were found to be 1.17 mA and 0.48 A W-1, respectively, at a voltage of 1 V and a light intensity of 60 mW cm-2 of a xenon lamp. The photocurrent measured when the photodetector was bent under a strain of 3% was 1.15 mA, which corresponds to 98.3% compared to that before bending. Moreover, the photocurrent and photoresponsivity of the flexible photodetector measured after the 200 cyclic-bending tests are comparable to those measured before bending.
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