黄铜矿
异质结
开尔文探针力显微镜
带材弯曲
材料科学
光电子学
外延
半导体
太阳能电池
图层(电子)
表征(材料科学)
金属有机气相外延
沉积(地质)
薄膜
表面光电压
纳米技术
原子力显微镜
铜
冶金
物理
古生物学
量子力学
沉积物
光谱学
生物
作者
Ch. Sommerhalter,Sascha Sadewasser,Thilo Glatzel,Th.W. Matthes,Arnulf Jäger-Waldau,Martha Ch. Lux‐Steiner
出处
期刊:Surface Science
[Elsevier]
日期:2001-06-01
卷期号:482-485: 1362-1367
被引量:12
标识
DOI:10.1016/s0039-6028(01)00878-0
摘要
Kelvin probe force microscopy in ultrahigh vacuum is a powerful technique for the quantitative characterization of structural and electronic properties of semiconductor surfaces and interfaces on a nanometer scale. In chalcopyrite heterojunction solar cells the interfaces play a crucial role for the performance of the device. We studied chalcopyrite heterostructures based on epitaxial CuGaSe2 thin films prepared by MOVPE. Lateral variations of the contact potential difference and the surface photovoltage (SPV) were investigated after different process steps, including the deposition of n-CdS or n-ZnSe buffer layers and the n+-ZnO window layer. Measurements on the CuGaSe2 absorber material show terraces with preferential orientation in the [1 1 0] direction in the topographic image. A negative SPV of −300 mV on the as-grown CuGaSe2 absorber could be attributed to a highly doped p+-Cu2−xSe surface layer of a few nm thickness, which was removed by a KCN etch, resulting in a flat band condition. The deposition of the buffer layer alone does not lead to a significant band bending at the CuGaSe2/buffer interface and the deposition of the ZnO window layer seems to be crucial for the development of the band bending within the absorber.
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