电子密度
化学
电子定域函数
范德瓦尔斯力
范德瓦尔斯半径
电负性
氢键
Atom(片上系统)
原子轨道
密度泛函理论
电子
结晶学
原子物理学
分子物理学
计算化学
分子
物理
量子力学
有机化学
嵌入式系统
计算机科学
作者
I. Mata,Ibón Alkorta,Elı́es Molins,Enrique Espinosa
标识
DOI:10.1002/chem.200901628
摘要
Abstract Topological analyses of the theoretically calculated electron densities for a large set of 163 hydrogen‐bonded complexes show that H⋅⋅⋅X interactions can be classified in families according to X (X=atom or π orbital). Each family is characterised by a set of intrinsic dependencies between the topological and energetic properties of the electron density at the hydrogen‐bond critical point, as well as between each of them and the bonding distance. Comparing different atom‐acceptor families, these dependencies are classified as a function of the van der Waals radius r X or the electronegativity χ X , which can be explained in terms of the molecular orbitals involved in the interaction. According to this ordering, the increase of χ X leads to a larger range of H⋅⋅⋅X distances for which the interaction is of pure closed‐shell type. Same dependencies observed for H⋅⋅⋅O interactions experimentally characterised by means of high‐resolution X‐ray diffraction data show a good agreement with those obtained from theoretical calculations, in spite of a larger dispersion of values around the expected fitting functions in the experimental case. Theoretical dependencies can thus be applied to the analysis of the experimental electron density for detecting either unconventional hydrogen bonds or problems in the modelling of the experimental electron density.
科研通智能强力驱动
Strongly Powered by AbleSci AI