分压
非阻塞I/O
材料科学
氧气
氧化镍
电阻率和电导率
分析化学(期刊)
扫描电子显微镜
溅射
溅射沉积
带隙
薄膜
透射率
霍尔效应
氧化物
复合材料
冶金
纳米技术
光电子学
化学
生物化学
有机化学
催化作用
色谱法
电气工程
工程类
作者
A. Mallikarjuna Reddy,A. Sivasankar Reddy,Kee-Sun Lee,P. Sreedhara Reddy
标识
DOI:10.1016/j.ceramint.2011.04.121
摘要
Nickel oxide (NiO) thin films were deposited on glass substrates by dc reactive magnetron sputtering technique. The influence of oxygen partial pressure on the structural, microstructural, compositional, optical and electrical properties of NiO films was investigated by X-ray diffraction, scanning electron microscopy with energy dispersive spectroscopy, spectrophotometer and Hall effect studies. The XRD analysis showed that the preferred orientation changed from (2 0 0) to (2 2 0) as the oxygen partial pressure increases. Fine grains were observed at an oxygen partial pressure of 6 × 10−2 Pa. The deposited films exhibited optical transmittance of 60% and direct band gap of 3.82 eV at 6 × 10−2 Pa. The Hall measurements showed that the electrical resistivity of NiO films decreases as oxygen partial pressure increased to 6 × 10−2 Pa, thereafter increased at higher oxygen partial pressures.
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