材料科学
电介质
限制
载流子
光电子学
制作
带隙
电子迁移率
散射
电荷(物理)
氧化物
高-κ电介质
凝聚态物理
光学
工程类
物理
病理
机械工程
医学
量子力学
冶金
替代医学
作者
Sivacarendran Balendhran,Jianqiang Deng,Jian Zhen Ou,Sumeet Walia,James R. Scott,Jianshi Tang,Kang L. Wang,Matthew R. Field,Salvy P. Russo,Serge Zhuiykov,Michael S. Strano,Nikhil V. Medhekar,Sharath Sriram,Madhu Bhaskaran,Kourosh Kalantar-zadeh
标识
DOI:10.1002/adma.201203346
摘要
We demonstrate that the energy bandgap of layered, high-dielectric α-MoO3 can be reduced to values viable for the fabrication of 2D electronic devices. This is achieved through embedding Coulomb charges within the high dielectric media, advantageously limiting charge scattering. As a result, devices with α-MoO3 of ∼11 nm thickness and carrier mobilities larger than 1100 cm2 V−1 s−1 are obtained.
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