Surface segregation model for Sn-doped GaAs grown by molecular beam epitaxy

A segregation model is presented which accounts for the accumulation of Sn at the growing film surface and the corresponding Sn depletion near the film-substrate interface during the deposition of Sn-doped GaAs by molecular beam epitaxy. Calculated Sn profiles were found to provide a good fit to experimental data obtained by secondary ion mass spectrometry.