Research of the Preparation Technology for the SiC Whisker

SiC whiskers were prepared on graphite matrix using common and low-cost hydrogen silicone oil (H-PSO) as raw material, and the influence of different process parameters on the growth of SiC whisker was stud- ied based on the crystallization fraction using orthogonal test method. The process parameters include heat treat- ment temperature (T), holding time (t), flow of protective atmosphere (f) and porosity of matrix (P). The morphol- ogy and structural characteristics of SiC whisker were also analyzed by SEM, TEM, RAMAN and XRD. The results show that the temperature is the most important factor that influences the growth of SiC whisker, followed by gas flow, porosity, holding time in proper sequence. The bigger gas flow in safe range makes generation reaction of SiC whisker sufficient, and smaller porosity benefits SiC crystal nucleus to grow up. Higher temperature and longer time are favorable to whisker continued growth. The SiC whisker is of core-shell structure with SiC phase as core and silicon oxide as the shell.