Self-Assembly of the Lateral In2Se3/CuInSe2 Heterojunction for Enhanced Photodetection

Layered materials have been found to be promising candidates for next-generation microelectronic and optoelectronic devices due to their unique electrical and optical properties. The p–n junction is an elementary building block for microelectronics and optoelectronics devices. Herein, using the pulsed-laser deposition (PLD) method, we achieve pure In2Se3-based photodetectors and In2Se3/CuInSe2-based photodetectors with a lateral p–n heterojunction. In comparison to that of the pure In2Se3-based photodetector, the photodetectors based on the In2Se3/CuInSe2 heterojunction exhibit a tremendous promotion of photodetection performance and obvious rectifying behavior. The photoresponsivity and external quantum efficiency of the fabricated heterojunction-based device under 532 nm light irradiation are 20.1 A/W and 4698%, respectively. These values are about 7.5 times higher than those of our fabricated pure In2Se3-based devices. We attribute this promotion of photodetection to the suitable band structures of In2Se3 and CuInSe2, which greatly promote the separation of photoexcited electron–hole pairs. This work suggests an effective way to form lateral p–n junctions, opening up a new scenario for designing and constructing high-performance optoelectronic devices.