电迁移
金属间化合物
材料科学
晶界
焊接
粒度
晶界扩散系数
空隙(复合材料)
阴极
各向异性
冶金
复合材料
凝聚态物理
合金
微观结构
化学
光学
物理化学
物理
作者
Mingliang Huang,Jie Zhao,Z.J. Zhang,Ning Zhao
标识
DOI:10.1016/j.jallcom.2016.04.024
摘要
The effect of high diffusivity anisotropy in β-Sn grain on electromigration behavior of micro-bumps was clearly demonstrated using Sn-3.0Ag-0.5Cu solder interconnects with only two β-Sn grains. The orientation of β-Sn grain (θ is defined as the angle between the c-axis of β-Sn grain and the electron flow direction) is becoming the most crucial factor to dominate the different electromigration-induced failure modes: 1) the excessive dissolution of the cathode Cu, blocking at the grain boundary and massive precipitation of columnar Cu6Sn5 intermetallic compounds (IMCs) in the small angle θ β-Sn grain occur when electrons flow from a small angle θ β-Sn grain to a large one; 2) void formation and propagation occur at the cathode IMC/solder interface and no Cu6Sn5 IMCs precipitate within the large angle θ β-Sn grain when electrons flow in the opposite direction. The EM-induced failure mechanism of the two β-Sn grain solder interconnects is well explained in viewpoint of atomic diffusion flux in β-Sn.
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