极端紫外线
紫外线
反射率
原位
等离子体
材料科学
氢
环境科学
光学
光电子学
化学
物理
气象学
核物理学
激光器
有机化学
作者
Daniel T. Elg,John R. Sporre,Gianluca A. Panici,Shailendra N. Srivastava,David N. Ruzic
出处
期刊:Journal of vacuum science & technology
[American Institute of Physics]
日期:2016-02-23
卷期号:34 (2): 021305-021305
被引量:20
摘要
Laser-produced Sn plasmas used to generate extreme ultraviolet (EUV) light for lithography cause the release of Sn ions and neutrals in the EUV source chamber. These Sn atoms condense and deposit on the multilayer collector optic, which reduces its ability to reflect EUV light. This lowers the source throughput and eventually necessitates downtime for collector cleaning. In this paper, an in situ plasma-based collector cleaning technique is presented and experimentally demonstrated. First, the technique is shown to completely clean a 300 mm diameter stainless steel dummy collector. Second, simulations and secondary ion mass spectroscopy depth profiles show that the technique does not erode the real multilayer mirrors. Finally, EUV reflectivity measurements demonstrate the ability of the technique to restore EUV reflectivity to Sn-coated multilayer mirrors. This technique has the potential to be used in conjunction with source operation, eliminating cleaning-related source downtime.
科研通智能强力驱动
Strongly Powered by AbleSci AI