Process Research on PECVD SiN-x:H Film for Crystalline Silicon Solar Cells

In this paper,the influence of temperature and gas flow on the thickness and refractive index of SiNx:H film,and the influence of gas flow and radio frequency power on opto-electric conversion efficiency,open circuit voltage and short circuit current of crystalline silicon solar cells were studied,according to the research of the SiNx:H film preparation by PECVD method.And then,the passivation effects of PECVD on different type of crystalline silicon solar cells were studied.The results show that with the increase of SiH4 flow,the thickness and refractive index of SiNx:H film increase.While with the increase of temperature,the thickness of SiNx:H coating increases first and then decreases,and the refractive index has no significant change.For the multi-crystalline silicon solar cells,when the ratio of NH3 and SiH4 is 11,the opto-electric conversion efficiency is largest.With the radio frequency power increase from 2 800 W to 4 200 W,the opto-electric conversion efficiency increases first and then decreases,when the radio frequency is up to 3700 W,the opto-electric conversion efficiency obtains peak value.The passivation effect of direct plasma PECVD for multi-crystalline solar cells is better than that for mono-crystalline solar cells.