A two-dimensional MoSe2/MoSi2N4 van der Waals heterostructure with high carrier mobility and diversified regulation of its electronic properties

Using first-principles calculations, we design a novel 2D vertical MoSe₂/MoSi₂N₄ vdWH, which has high carrier mobility up to 10⁴ cm² V⁻¹ s⁻¹ and easily tunable electronic properties.