压力(语言学)
材料科学
热的
流动应力
粘性流
复合材料
热力学
机械
物理
微观结构
语言学
哲学
摘要
Stress present in thermal SiO2 at temperatures during growth in wet O2 has been measured as a function of growth temperature. During growth at 950 °C and below, compressive stress on the order of 7×109 dyn/cm2 is generated in the SiO2. During growth at 975 and 1000 °C, the SiO2 grows in a stress-free state. The results, which are consistent with a viscous flow point somewhere between 950 and 975 °C, are of value in avoiding mechanical failure effects in integrated-circuit processing.
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