相变
凝聚态物理
塞贝克系数
电子
热导率
声子
半导体
电阻率和电导率
最大值和最小值
热容
材料科学
过渡点
相(物质)
量子相变
物理
热力学
量子力学
数学分析
光电子学
数学
作者
S. A. Aliev,F. F. Aliev
出处
期刊:Semiconductors
[Pleiades Publishing]
日期:2008-04-01
卷期号:42 (4): 394-400
被引量:10
标识
DOI:10.1134/s1063782608040052
摘要
Temperature dependences of electrical conductivity σ, thermoelectric power α, results of differential thermal analysis ΔT y , thermal conductivity χ, temperature conductivity κ, and heat capacity C p were studied in Ag2Te and Ag2Se semiconductors in the region of the phase transition. Two extrema are observed in the temperature dependence χ(T): a maximum in the region of the α′ → β′ transition and a minimum in the region of the β′ → β transition; these extrema are caused by the similar dependence C p (T). It is shown that the α → α′ and β′ → β transitions are displacement transitions, while the α′ → β′ transition is of reconstruction type. It is established that the disorder parameter η in silver chalcogenides is highly smeared in the region of the phase transition; therefore, disordering of phases at the point of the phase transition is incomplete: 73, 62, and 48% in Ag2Te, Ag2Se, and Ag2S, respectively. The minimum volumes V ph for new phases are calculated; it is shown that the value of V ph in displacement transitions is larger than in the reconstruction-type transitions.
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