Influence of deposition temperature on amorphous Ga 2 O 3 solar-blind ultraviolet photodetector

Abstract Solar-blind ultraviolet photodetectors have potential applications in space communication, ozone hole monitoring and missile tracking. Amorphous Ga 2 O 3 (a-Ga 2 O 3 ) films are deposited by a simple radio frequency magnetron sputtering at different deposition temperatures. Fully transparent devices on a quartz substrate are fabricated with high responsivity, wide detection range and good repeatability. With the increase of Ga 2 O 3 deposited temperature, the concentration of oxygen vacancy increases accordingly, leading to a wide detection range from 250 to 325 nm and high responsivity (138 A W −1 at 5 V bias). The underlying mechanism has been discussed and analyzed. Our results should advance the application of a-Ga 2 O 3 -based ultraviolet photodetectors and other relevant devices.