High Gain 2-stage Class-E RF Power Amplifier for Wireless Power Transfer

During the last decade, the implementation of wireless power transfer (WPT) technology has been penetrating in many applications. One of essential issues in wireless power transfer is how to acquire high efficiency of power transferred wirelessly. In this paper, a high gain E-class radio frequency (RF) power amplifier is designed in 2-stage using MOSFETs and characterized for wireless power transfer application. The use of class-E RF power amplifier driven by 2 cascaded MOSFETs of IRF510 and IRF620 types is aimed to attain high efficiency of RF power amplifier with high gain amplification. Some attempts to achieve high output power of the RF power amplifier are performed through a circuit & EM simulator software. Based on the optimum design result, the proposed RF power amplifier is then realized and experimentally characterized. The result shows that the realized RF power amplifier has gain achievement more than 38 dB suitable for wireless power transfer application.