A new approach to achieving strong ferroelectric properties in TiN/Hf 0.5 Zr 0.5 O 2 /TiN devices

Abstract In this paper, we propose a method to improve the performance of TiN/Hf 0.5 Zr 0.5 O 2 (HZO)/TiN Nano-capacitors used in memory devices. Instead of direct fabrication of the TiN/HZO/TiN device, our method involves an intermediate step in which W metal is used as a capping material to induce a large in-plane tensile strain during rapid thermal annealing, resulting in a total suppression of the monoclinic phase and the appearance of the ferroelectric phase. Consequently, after removing the W capping electrode through an etching process and the post-deposition of a TiN top electrode at room temperature, a high remnant polarization of approximately 40 μ C cm −2 and a 65% increase of coercive field were obtained. Moreover, the leakage current was reduced by an order of magnitude compared to the normal TiN/HZO/TiN capacitor; this result is attributed to the presence (absence) of the W/HZO (TiN/HZO) top interface during thermal annealing. The formation of a TiO x interfacial layer at elevated temperatures, which pulls oxygen from the HZO layer, resulting in the formation of oxygen vacancies, is the main cause of the high leakage current through the TiN/HZO/TiN stacks. It was confirmed that the re-capped TiN/HZO/TiN capacitor has a comparable endurance to a normal capacitor. Our results offer the re-capping process as a promising approach to fabricating HfO 2 -based ferroelectric memory devices with various electrode materials.