Structural investigations of the (Si 1-x ,Ge x )O 2 single-crystal thin films by x-ray photoelectron spectroscopy

The electron structure of the SiO2-GeO2 single crystal thin films has been investigated by x-ray photoelectron spectroscopy (XPS). The growth of the high-germanium a-quartz was performed under hydrothermal conditions, applying a technique that involves high-alkaline solutions. The quartz crystals with germanium oxide content up to 14 mol% have been obtained for the first time. The XPS experiments were carried out using a photoelectron spectrometer (ES-2401). The XPS data show evidence for high separation of the [SiO4]n and [GeO4]n clusters, because the charged parameters for these atoms are not subjected to mutual excitation to remain close to initial SiO2 and GeO2.