Improvements in Stability and Performance of N,N′‐Dialkyl Perylene Diimide‐Based n‐Type Thin‐Film Transistors

The stability and performance of N,N′-dioctyl perylene diimide (PDI-C8) and N,N′-ditridecyl perylene diimide (PDI-C13) thin-film transistors (TFTs) are increased using optimized growth rates and sulfur-modified top-contact electrodes. Changing the grain size and the depth of grain boundaries by controlling film growth rate is another way of increasing the air stability of perylene diimides without electron-withdrawing groups.