发光二极管
光电子学
材料科学
二极管
紫外线
量子效率
波长
光学
物理
作者
Yaxuan Yao,Hongjian Li,Panpan Li,Christian J. Zollner,Michael Wang,Michael Iza,James S. Speck,Steven P. DenBaars,Shuji Nakamura
标识
DOI:10.35848/1882-0786/ac6da0
摘要
Abstract AlGaN-based deep ultraviolet (DUV) micro-light-emitting diodes ( μ LEDs) with emission wavelengths between 277 and 304 nm with mesa dimensions down to 20 μ m were fabricated. Their size-dependent electrical and optical characteristics were analyzed. At 20 A cm −2 , the external quantum efficiency (EQE) increased from 2.0% to 2.3% mainly due to the improved light extraction efficiency; the forward voltage was 7.6 V in 20 μ m sized μ LEDs in comparison to 9.1 V in 300 μ m LEDs due to better current spreading in the smaller devices. The peak EQEs of the 20 μ m μ LEDs were 2.5% and 4.0% for 277 and 304 nm, among the highest reported for DUV μ LEDs.
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