钙钛矿(结构)
卤化物
电子迁移率
载流子
光电子学
二极管
材料科学
半导体
载流子寿命
电荷(物理)
电子
限制
化学
物理
硅
无机化学
结晶学
工程类
机械工程
量子力学
作者
Zheng Zhang,Bayrammurad Saparov
摘要
Halide perovskites have recently emerged as promising semiconductor materials for several applications including solar cells, light-emitting diodes, and radiation detectors. The charge carrier transport properties, which could be evaluated by the mobility-lifetime (mu-tau or μ-г) product, serve an important role for the development of halide perovskites for radiation detection applications. In this Perspective, we first explain the charge transport mechanism and the limiting factors that determine the intrinsic charge carrier mobility in halide perovskite single crystals. Then, we overview the techniques and methods that have been employed for evaluating the charge carrier mobility (for both electrons and holes). Finally, we discuss the discrepancy in the experimentally determined carrier mobility from the literature for halide perovskite single crystals, and provide a perspective on future developments for carrier mobility enhancement.
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